Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

摘要

We present a practical and easy-to-implement method for high-speed nearinfrared single-photon detection based on InGaAs/InP single-photon avalanchephotodiodes (SPADs), combining aspects of both sine gating andself-differencing techniques. At a gating frequency of 921 MHz and temperatureof -30 $^{\circ}$C we achieve: a detection efficiency of 9.3 %, a dark countprobability of 2.8$\times10^{-6}$ ns$^{-1}$, while the afterpulse probabilityis 1.6$\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. Inprinciple, the maximum count rate of the SPAD can approach 100 MHz, which cansignificantly improve the performance for diverse applications.